| PART |
Description |
Maker |
| SI4886DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4882DY |
N-Channel Reduced Qg/ Fast Switching MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI4872DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI7860ADP |
N-Channel Reduced, Fast Switching MOSFET
N-Channel Reduced Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7388DP |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| SI7384DP |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| SI9802DY |
Dual N-Channel Reduced Qg/ Fast Switching MOSFET
Dual N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
| STE36N50-DA |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics
ST Microelectronics
|
| STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR
N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR
N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MT49H16M16 MT49H16M16FM |
REDUCED LATENCY DRAM RLDRAM
|
Micron Technology
|
| MT49H32M9 MT49H8M36 MT49H16M18 |
288Mb CIO Reduced Latency
|
Micron Technology, Inc.
|
